In order to handle these challenges, NAND flash system producers are aggressively pursuing various kinds of 3D VIM designs. Although the specific materials required in every of these constructions are completely different, all of those approaches require alternating layers of silicon-based mostly films. Every pair of alternating layers is used to type a reminiscence cell, and as much as 64 pairs of alternating layers are expected for use within the formation of a VIM chip. Using this processing method, underlying movie roughness and defects inside each layer can potentially be magnified whereas increase the VIM construction. To manage these issues and ensure excessive yields, distinctive nano-particle control (required to cut back defectivity) and extremely-smooth movie deposition (required to keep away from phrase line edge variability, and hence phrase line performance variations) are both manufacturing necessities.
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